A-Tech 512GB (8x64GB) DDR4 3200 ECC LRDIMM 4Rx4 Server RAM
- 512 GB (8 × 64 GB)
- DDR4 3200
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256 GB quad-channel kit of four 64 GB DDR5 5600 registered ECC DIMMs at CL46 and 1.1 V for servers and workstations
Capacity 256GB (4 x 64GB)
This 256GB quad-channel kit contains four 64GB registered DIMMs built for DDR5 server and workstation platforms only. It will not fit desktop or laptop systems. Each module uses a 288-pin form factor with ECC error correction for data integrity in critical workloads.
The modules operate at the standard DDR5 voltage of 1.1V, keeping power draw low for high-density server configurations. Passive cooling relies on chassis airflow; no fans or active cooling are included. Acoustic impact is negligible in typical rack or workstation environments.
CL46 latency at 5600 MT/s (PC5-44800) defines the timing envelope for memory-controller compatibility. The 2Rx4 rank structure and EC8 registered buffer determine whether your platform can populate all four slots at rated speed.
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| Product | |
|---|---|
| Brand name | A-Tech |
| Product line | A-Tech DDR5 Server Memory RAM |
| Model name | A-Tech 64 GB 2Rx4 PC5-5600B-R EC8 |
| Total capacity | 256 GB (4 × 64 GB) |
| Performance | |
| Rated speed | DDR5 5600 (PC5 44800) |
| Processor | |
| Chipset | Major Brand Chipset |
| Memory | |
| CAS latency | CL46 |
| ECC support | Yes |
| Buffer type | Registered |
| Memory rank | 2Rx4 |
| Kit configuration | Quad Channel Kit |
| Power | |
| Rated voltage | 1.1 V |
Other versions of this model
Insert each 64 GB module into the slots your motherboard manual designates for quad-channel population, pressing straight down until the latches click; the registered buffer adds a slight delay before the POST memory check completes.
The modules carry a lifetime warranty and have no user-serviceable parts; replacement is only required if a memory test reports uncorrectable errors on a specific 64 GB stick.
The CAS 46 timing at 1.10 V is the first fixed limit; once the memory controller saturates the 44800 MB/s bandwidth, further throughput gains require higher-frequency or lower-latency DIMMs.
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