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Two green DDR5 server memory modules with gold contacts and black chips, no heat spreaders

NEMIX RAM

NEMIX RAM 256GB (2x128GB) DDR5 4800 ECC RDIMM memory upgrade for ASUS S14NA-U12

SKU CH-JWQT-4GGHG

DDR5 4800 ECC RDIMM kit adds 256 GB in two 128 GB modules at 1.1 V CL40 for ASUS S14NA-U12 servers

  • Total capacity256 GB (2 × 128 GB)
  • Rated speedDDR5 4800 (PC5 38400)
  • ChipsetMajor OEM Samsung, Micron, Hynix
  • CAS latencyCL40
  • Buffer typeRegistered
  • Rated voltage1.1 V
  • 256 GB total capacity from two 128 GB modules
  • DDR5 4800 speed rated at PC5-38400 for high throughput
  • ECC registered RDIMM design protects data integrity in servers
  • Low 1.1 V operating voltage reduces power draw
  • CL40 latency with 4Rx4 organisation for dense workloads

256GB DDR5 ECC RDIMM kit for ASUS S14NA-U12

This 256GB kit contains two 128GB registered DIMMs built for the ASUS S14NA-U12 server board. Each module runs at DDR5 4800 with CL40 latency and on-die ECC for data integrity. The 4Rx4 organisation and 1.1V operation suit high-density enterprise workloads. IT teams deploying virtualisation or database layers on this platform gain a straightforward capacity upgrade.

Thermals and power at DDR5 4800

Modules operate at 1.1V without heat spreaders, relying on chassis airflow for cooling. Registered buffering reduces electrical load on the memory controller, helping keep system power draw predictable under sustained load. The standard 288-pin DDR5 form factor fits the board's native slots, so no extra cabling or adapters are required. Acoustic impact is negligible in a properly ventilated server enclosure.

Upgrading from lower-capacity RDIMMs

Replacing smaller DDR5 RDIMM pairs with this 2x128GB kit doubles or quadruples usable memory per channel, letting the S14NA-U12 host more virtual machines or larger in-memory datasets. The jump is worthwhile when current capacity forces swapping or limits container density. Buyers who need faster clock speeds or lower latency than CL40 should look elsewhere, as this kit is validated for 4800 MT/s operation only.

How it compares

Measured against everything we stock in Model-Specific Memory Upgrades, at today’s prices. Recalculated every night.

Price $8,408.99
Pricier than about 85% of the 21,161 comparable items (median $397.99).
Total capacity 256 GB (2 × 128 GB)
Higher than about 80% of the 20,941 comparable items (median 32 GB).
Price per GB $32.85 per GB
Pricier than about 90% of the 20,941 comparable items (median $8.19 per GB).

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Specifications

Product
Brand nameNEMIX RAM
Product lineASUS Server Motherboard Compatible Series Memory
Model nameASUS DDR5 4800 MHz ECC RDIMM Registered Server Memory
Part numberMR38400-744K2
Total capacity256 GB (2 × 128 GB)
Product type288-Pin DDR5 RDIMM
Performance
Rated speedDDR5 4800 (PC5 38400)
Processor
ChipsetMajor OEM Samsung, Micron, Hynix
Memory
CAS latencyCL40
ECC supportYes
Buffer typeRegistered
Heat spreaderNo
Memory rank4Rx4
Power
Rated voltage1.1 V
Compatibility
Compatible systemsASUS
In the box
Included items256 GB (2 × 128 GB) DDR5 4800 MHz PC5-38400 4Rx4 1.1 V CL40 288-PIN ECC RDIMM Registered Server Memory KIT

Questions about this item

How do I install these 288-pin DDR5 RDIMM modules in the ASUS S14NA-U12 and which slot order avoids the common mistake?

Power down the server, open the chassis, and insert each 128 GB module into the DIMM slots specified in the ASUS S14NA-U12 manual for a two-module population; the frequent error is placing them in adjacent slots instead of the paired channels the board requires.

What maintenance or replacement will this 256 GB DDR5 4800 ECC RDIMM kit need over its service life?

No scheduled maintenance is required; if a module fails, the ECC function will log corrected errors and the kit is covered by a lifetime replacement warranty, so the only action is swapping the faulty stick.

What limit appears first when this 4Rx4 CL40 1.10 V kit runs sustained workloads on the S14NA-U12?

The CAS latency of CL40 at 4800 MT/s sets the timing ceiling, so memory-controller throughput and latency become the bottleneck before the 1.10 V power envelope or thermal limits are reached.

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