Crucial CT2K8G3S160BM 16GB (2 x 8GB) DDR3 1600 SO-DIMM memory upgrade
- 16 GB (2 × 8 GB)
- DDR3 1600
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4 GB DDR3 SODIMM running at 1866 MHz with CL13 latency and 1.35 V for ASUS systems
This 4 GB DDR3 SODIMM runs at 1866 MHz with CL13 latency and 1.35 V operation. The 204-pin unbuffered module uses a 2Rx8 organisation and carries no heat spreader. It is built from major OEM chips and validated for ASUS desktop compatibility.
The module fits ASUS desktops that accept DDR3 1866 SODIMMs at 1.35 V without ECC or registered buffering. Builders who need ECC, registered DIMMs or a different DDR generation cannot use this module. Capacity seekers wanting more than 4 GB per slot should look elsewhere.
Only systems with a 204-pin DDR3 SODIMM socket that support 1.35 V unbuffered memory at 1866 MHz can accept this upgrade. A different pin count, voltage or DDR generation will physically or electrically prevent installation.
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| Product | |
|---|---|
| Brand name | NEMIX RAM |
| Product line | ASUS Gaming Motherboard Compatible Series Memory |
| Model name | ASUS DDR3 1866 MHz Non-ECC Unbuffered UDIMM |
| Part number | MD14900-428LK1 |
| Total capacity | 4 GB |
| Product type | 204-Pin DDR3 SODIMM |
| Performance | |
| Rated speed | DDR3 1866 (PC3 14900) |
| Processor | |
| Chipset | Major OEM Samsung, Micron, Hynix |
| Memory | |
| CAS latency | CL13 |
| ECC support | No |
| Buffer type | Unbuffered |
| Heat spreader | No |
| Memory rank | 2Rx8 |
| Power | |
| Rated voltage | 1.35 V |
| Compatibility | |
| Compatible systems | ASUS |
| In the box | |
| Included items | 4 GB (1 × 4 GB) DDR3 1866 MHz PC3-14900 2Rx8 1.35 V 204-PIN Non-ECC Unbuffered UDIMM |
Align the notch on the module with the slot key, insert at an angle, then press down firmly until both side clips click; the step often missed is fully seating both clips so the module sits flat.
No scheduled maintenance is required; replacement is only needed if a memory test reports errors or if you upgrade to a higher capacity supported by your ASUS system.
The CL13 latency at 1866 MT/s sets the throughput ceiling; under sustained load the memory controller hits that timing limit before voltage or thermal constraints become an issue.
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