OWC 8GB DDR3L 1600 ECC Registered RDIMM 2Rx4 1.35V Cisco UCS C200 M2 C210 M2
- 8 GB
- DDR3L 1600
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16 GB dual-channel DDR3-1866 ECC registered RDIMM kit for servers and workstations
Capacity 16GB (2 x 8GB)
Rank 1Rx4
This OWC kit provides 16 GB of DDR3 memory as two matched 8 GB modules running at 1866 MHz with CL13 latency. Each stick is a 240-pin registered DIMM with ECC and 1Rx4 organisation, operating at the standard 1.5 V. The modules are built to JEDEC and RoHS specifications for server and workstation platforms.
The memory is designed for workstations, servers and compatible NAS or router systems that require registered ECC DDR3. It will not function in standard desktop computers that accept only unbuffered non-ECC modules, and it cannot be mixed with unbuffered memory. Buyers needing unbuffered DIMMs or a different voltage should look elsewhere.
The registered buffer and on-die ECC combine with a single-rank x4 organisation to meet the signal-integrity demands of multi-socket server boards. This specific combination of registration, ECC and rank geometry is the decisive factor for compatibility with the target platform.
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| Product | |
|---|---|
| Brand name | OWC |
| Part number | 1R8D31R4016P |
| Total capacity | 16 GB (2 × 8 GB) |
| Product type | 240-Pin DDR3 ECC RDIMM |
| Performance | |
| Rated speed | DDR3 1866 (PC3 14900) |
| Memory | |
| CAS latency | CL13 |
| ECC support | Yes |
| Buffer type | Registered |
| Memory rank | 1Rx4 |
| Kit configuration | Dual Channel Kit |
| Heat spreader | No |
| Power | |
| Rated voltage | 1.5 V |
Other versions of this model
Align the notch on each module with the slot key, press firmly until both retention clips click, and populate matching channel slots for dual-channel operation.
No scheduled maintenance is required; if a module fails, replace it with an identical 8GB DDR3 1866 CL13 1.5V ECC Registered RDIMM to preserve dual-channel performance.
The DDR3 1866 speed and CL13 latency set the throughput ceiling; sustained workloads will saturate the 14900 MT/s transfer rate before voltage or thermal limits become a factor.
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