Crucial CT2K8G3S160BM 16GB (2 x 8GB) DDR3 1600 SO-DIMM memory upgrade
- 16 GB (2 × 8 GB)
- DDR3 1600
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8GB dual-channel DDR3L 1600 SO-DIMM kit with CL11 timing and 1.35V operation for compatible Apple notebooks
This Mushkin Enhanced iRam kit provides 8GB of DDR3L memory in two 4GB SO-DIMM modules built for Apple notebooks. The 204-pin DDR3L 1600 specification matches the PC3L 12800 standard used in compatible Mac systems.
Operating at 1.35V with a CAS latency of 11, the modules run cooler than standard DDR3 during extended workloads. The lower voltage helps maintain stability when the system is under continuous memory pressure.
This kit upgrades the original memory installed in supported Apple notebooks. The jump is worth it when the existing capacity limits multitasking or when the factory modules restrict the system to a lower speed grade.
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| Product | |
|---|---|
| Brand name | Mushkin Enhanced |
| Product line | iRam |
| Model name | MAR3S160BM4GX2 |
| Total capacity | 8 GB (2 × 4 GB) |
| Product type | 204-Pin DDR3 SO-DIMM |
| Performance | |
| Rated speed | DDR3L 1600 (PC3L 12800) |
| Memory | |
| CAS latency | 11 |
| Power | |
| Rated voltage | 1.35 V |
| Size & build | |
| Shipping weight | 0.11 kg |
| Package size | 213 × 114 × 25 mm |
| Compatibility | |
| Compatible with | For Apple Notebook |
The modules operate at 1.35V, which is the DDR3L low-voltage standard and typically draws less power than 1.5V DDR3, helping reduce heat during continuous operation.
Yes, each module uses the 204-pin SO-DIMM form factor, so the Mac must provide matching DDR3L SO-DIMM sockets for the upgrade to fit.
The kit runs at DDR3L 1600 with CAS latency 11; the system will set all installed modules to the lowest common speed and latency, so existing 1600 CL11 memory will match directly.
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