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Rectangular 2.5 inch internal SSD with black metal casing and SATA connectors

SAMSUNG

SAMSUNG 850 EVO 4TB 2.5" SATA Internal SSD MZ-75E4T0B/AM

SKU CH-WASF-MX838 MPN MZ-75E4T0B/AM

A 4TB 2.5" SATA internal SSD with 3D NAND and 4GB DRAM cache delivering up to 540 MBps read and 520 MBps write speeds

  • Total capacity4 TB
  • Sequential read speedUp to 540 MB/s
  • Sequential write speedUp to 520 MB/s
  • Interface typeSATA III
  • Form factor2.5 in (6.35 cm)
  • Product typeInternal Solid State Drive (SSD)
  • Large 4TB capacity stores extensive data libraries
  • Sequential read up to 540 MBps speeds file transfers
  • Sequential write up to 520 MBps accelerates content creation
  • 3D NAND with 4GB DRAM cache sustains heavy workloads
  • 5 million hour MTBF ensures long-term reliability

4TB SATA III 3D NAND SSD

The Samsung 850 EVO MZ-75E4T0B/AM is a 2.5-inch internal solid-state drive built for consumer laptops and desktops. It provides 4TB of storage using 3D NAND memory and a SATA III interface. The MHX controller and 4GB DRAM cache manage read and write operations for everyday workloads.

Samsung Data Migration and Magician software

Free downloadable utilities simplify the transition from an existing drive and provide ongoing management tools. Data Migration copies the operating system and files to the new SSD. Magician enables firmware updates, health monitoring and performance optimisation without additional cost.

Sequential read up to 540 MBps

The drive delivers maximum sequential read speeds of 540 MBps and sequential writes of 520 MBps over SATA III. Random read reaches 98,000 IOPS at queue depth 32 while random write reaches 90,000 IOPS at the same depth. These figures determine whether the drive matches the throughput needs of the target system.

How it compares

Measured against everything we stock in Internal NVMe & SATA SSDs, at today’s prices. Recalculated every night.

Price $1,271.99
Pricier than about 90% of the 1,994 comparable items (median $180.49).
Total capacity 4 TB
Higher than about 90% of the 1,368 comparable items (median 1 TB).
Sequential read speed Up to 540 MB/s
Lower than about 83% of the 1,180 comparable items (median 2,400 MB/s).
Price per TB $318.00 per TB
Pricier than about 78% of the 1,362 comparable items (median $165.50 per TB).

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Specifications

Product
Brand nameSAMSUNG
Product line850 EVO
Model nameMZ-75E4T0B/AM
Total capacity4 TB
Product typeInternal Solid State Drive (SSD)
Intended useConsumer
Performance
Sequential read speedUp to 540 MB/s
Sequential write speedUp to 520 MB/s
Random read (4K)Up to 10,000 IOPS (QD1)
Up to 98,000 IOPS (QD32)
Random write (4K)Up to 40,000 IOPS (QD1)
Up to 90,000 IOPS (QD32)
Storage
NAND flash type3D NAND
Controller chipMHX
Cache memory4 GB DRAM
Ports & slots
Interface typeSATA III
Power
Idle power draw70mW
Active power draw3.1 W/3.6 W (Read/Write)
Size & build
Form factor2.5 in (6.35 cm)
Overall height6.8 mm
Overall width69.85 mm
Product depth100 mm
Product weight55g
Shipping weight0.13 kg
Package size145 × 141 × 22 mm
Environment & compliance
Operating temperature range0 °C to 70 °C
Storage temperature range-40 °C to 85 °C
Operating humidity range5% to 95% RH
Max shock toleranceNon-Operating: 1500G, duration 0.5m sec, 3 axis
Vibration toleranceNon-Operating: 20 to 2000 Hz, 20G
More details
Mean time between failures1,500,000 h

Questions about this item

How many terabytes can be written to the 4TB 850 EVO before the 3D NAND cells reach their rated endurance limit?

Samsung does not publish a terabytes-written rating for this model; the 1,500,000-hour MTBF and 3D NAND construction indicate high endurance, but no specific write-limit figure is provided.

Under a sustained heavy write workload, will the MHX controller or the SATA III interface hit its throughput ceiling first?

The SATA III link caps sequential writes at 520 MBps, while the MHX controller is specified for up to that same rate, so the interface limit is reached first during long sequential transfers.

What are the typical idle and active power draws of the 4TB 850 EVO when it runs continuously in a desktop?

Idle power is 70 mW; active power averages 3.1 W during reads and 3.6 W during writes, with an operating temperature range of 0 °C to 70 °C.

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