SAMSUNG 850 EVO 250GB 2.5" SATA Internal SSD MZ-75E250B/AM
- 2.5 in (6.35 cm)
- Internal SSD
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A 2.5 inch SATA solid state drive with 500GB capacity, 32 layer 3D V-NAND and a 512MB DDR3 cache delivering up to 540 MBps read and 520 MBps write speeds
Capacity 500GB
The Samsung 850 EVO 500 GB is a 2.5 inch internal SSD built with 32 layer 3D V-NAND and a Samsung MGX controller. It targets consumers who want faster boot times and application loading on laptops or desktops that still use the SATA interface. Sequential read reaches up to 540 MBps and write up to 520 MBps.
The drive slides into a standard 2.5 inch slot and connects through the existing SATA III cable and power connector. No extra adapter or mounting bracket is required beyond what the chassis already provides. Low idle power of 50 mW and an average active draw of 3.0 W leave more headroom for other components in compact builds.
A 512 MB Low Power DDR3 SDRAM cache helps sustain random read performance up to 98,000 IOPS and random write up to 90,000 IOPS at queue depth 32. The bundled Samsung Magician utility enables firmware updates, drive health monitoring and performance benchmarking so the SSD stays optimised over its 2,000,000 hour MTBF rating.
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| Product | |
|---|---|
| Brand name | SAMSUNG |
| Product line | 850 EVO |
| Model name | MZ-75E500B/AM |
| Total capacity | 500 GB |
| Product type | Internal Solid State Drive (SSD) |
| Intended use | Consumer |
| Performance | |
| Sequential read speed | Up to 540 MB/s |
| Sequential write speed | Up to 520 MB/s |
| Random read (4K) | Random Read (4 KB, QD32): Up to 98,000 IOPS Random Read (4 KB, QD1): Up to 10,000 IOPS |
| Random write (4K) | Random Write (4 KB, QD32): Up to 90,000 IOPS Random Write (4 KB, QD1): Up to 40,000 IOPS |
| Storage | |
| NAND flash type | 32 layer 3D V-NAND |
| Controller chip | Samsung MGX Controller |
| Cache memory | 512 MB Low Power DDR3 SDRAM |
| Ports & slots | |
| Interface type | SATA III |
| Power | |
| Idle power draw | 50 mW |
| Active power draw | Average: 3.0 W Maximum: 3.5 W (Burst mode) |
| Size & build | |
| Form factor | 2.5 in (6.35 cm) |
| Overall height | 6.86 mm |
| Overall width | 69.85 mm |
| Product depth | 100.08 mm |
| Shipping weight | 0.23 kg |
| Package size | 145 × 145 × 18 mm |
| Environment & compliance | |
| Operating temperature range | 0 °C to 70 °C |
| More details | |
| Mean time between failures | 2,000,000 h |
Other versions of this model
The 512MB Low Power DDR3 SDRAM cache handles burst traffic; once it fills, sustained writes fall back to the 3D V-NAND at up to 520 MBps sequential.
Active power averages 3.0 W with a 3.5 W burst ceiling; idle power is 50 mW, and the operating range is 0 °C to 70 °C.
A standard 2.5-inch SATA III drive bay and a SATA data plus power cable are required.
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