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Black 2.5 inch SATA internal SSD with 7mm height

SAMSUNG

SAMSUNG 870 EVO 4TB Internal SSD MZ-77E4T0B/AM

SKU CH-P1KS-5JW0Y MPN MZ-77E4T0B/AM

A 4TB 2.5-inch SATA III SSD with V-NAND, 4GB DDR4 cache and AES 256 encryption delivering 560 MBps read and 530 MBps write speeds for 2400 TBW endurance

  • Total capacity4 TB
  • Sequential read speedUp to 560 MB/s
  • Sequential write speedUp to 530 MB/s
  • Interface typeSATA III
  • Form factor2.5 in (6.35 cm)
  • Product typeInternal Solid State Drive (SSD)

Capacity 4TB

  • SATA III sequential reads up to 560 MBps for fast boot and load times
  • SATA III sequential writes up to 530 MBps to accelerate large file transfers
  • AES 256-bit encryption with TCG/Opal 2.0 and IEEE 1667 support protects stored data
  • 2400 TBW endurance rating sustains heavy workloads such as 8K video editing
  • 1,500,000-hour MTBF and 1500 G shock rating deliver long-term reliability

4TB SATA III internal SSD

The Samsung 870 EVO 4TB is a 2.5 inch internal solid state drive built for consumer PCs and compatible host systems. It uses V-NAND memory and a SATA III interface to deliver up to 560 MBps sequential read and 530 MBps sequential write speeds. A 4GB low power DDR4 cache supports sustained write performance. Hardware AES 256 encryption meets TCG Opal 2.0 and IEEE1667 standards.

Thermal and power profile in normal use

The drive has no moving parts and operates silently within a 7.00mm z-height. Power draw stays low during typical desktop workloads thanks to the low power DDR4 cache and efficient controller. Shock resistance is rated at 1500 G for 0.5 ms half sine, protecting data in portable or mobile installations. MTBF is specified at 1500000 hours.

Sustained load behaviour and endurance

Under continuous heavy writing the variable buffer helps maintain high throughput without rapid throttling. The drive is rated for 2400 TBW, supporting workloads such as 8K video processing and long-term archival. Compatibility testing covers major chipsets, motherboards, NAS units and video recording devices for reliable operation over extended periods.

How it compares

Measured against everything we stock in Internal NVMe & SATA SSDs, at today’s prices. Recalculated every night.

Price $1,432.99
Pricier than about 91% of the 1,994 comparable items (median $180.49).
Total capacity 4 TB
Higher than about 90% of the 1,368 comparable items (median 1 TB).
Sequential read speed Up to 560 MB/s
Lower than about 60% of the 1,180 comparable items (median 2,400 MB/s).
Price per TB $358.25 per TB
Pricier than about 81% of the 1,362 comparable items (median $165.50 per TB).

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Specifications

Product
Brand nameSAMSUNG
Product line870 EVO Series
Model nameMZ-77E4T0B/AM
Part numberMZ-77E4T0B/AM
Total capacity4 TB
Product typeInternal Solid State Drive (SSD)
Intended useConsumer
Performance
Sequential read speedUp to 560 MB/s
Sequential write speedUp to 530 MB/s
Storage
NAND flash typeV-NAND
Cache memorySamsung 4 GB Low Power DDR4 SDRAM
Data encryptionClass 0 (AES 256) TCG/Opal v2.0, MS eDrive (IEEE1667)
Write endurance2400 TB
Connectivity
Connection protocolSATA
Ports & slots
Interface typeSATA III
Size & build
Form factor2.5 in (6.35 cm)
Overall height7 mm
Overall width70 mm
Product depth100 mm
Shipping weight0.09 kg
Package size142 × 98 × 19 mm
More details
Mean time between failures1,500,000 h

Other versions of this model

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Questions about this item

How do I install the 2.5-inch SATA III SSD in a desktop, and what step is often missed?

Mount the 7.00 mm high drive in a 2.5-inch bay, connect the SATA data and power cables, then enable AHCI mode in BIOS so the SATA III interface runs at full speed.

What maintenance or replacement will the 4TB V-NAND drive need over its life?

No mechanical maintenance is required; the drive is rated for 2400 TBW and 1500000 hours MTBF, so replacement is only needed if the write endurance or hours limit is reached.

What limit appears first during sustained heavy writes on this SATA III model?

The SATA III interface caps sequential writes at 530 MBps, so the interface ceiling is reached before the V-NAND or 4 GB DDR4 cache saturate.

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