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SAMSUNG

SAMSUNG 870 QVO MZ-77Q8T0B/AM 8TB 2.5" SATA III internal SSD

SKU CH-MX67-6KE1X MPN MZ-77Q8T0B/AM

An 8 TB 2.5" SATA III solid-state drive using Samsung 4-bit QLC V-NAND with AES 256-bit encryption, up to 560 MB/s sequential read and 2,880 TBW endurance

  • Total capacity8 TB
  • Sequential read speedUp to 560 MB/s
  • Sequential write speedUp to 530 MB/s
  • Interface typeSATA III
  • Form factor2.5 in (6.35 cm)
  • Product typeInternal Solid State Drive (SSD)

Capacity 8TB

  • 8 TB capacity stores massive media libraries
  • Sequential read up to 560 MB/s speeds up boot and load times
  • AES 256-bit encryption with TCG Opal 2.0 protects sensitive data
  • 2880 TBW endurance rating supports heavy daily workloads
  • 5 inch SATA form factor fits most laptops and desktops

8TB SATA III QLC drive

The Samsung 870 QVO MZ-77Q8T0B/AM is an internal solid state drive with an 8TB capacity and a 2.5 inch form factor. It uses Samsung 4-bit QLC V-NAND and a MKX controller on a SATA III interface. The drive targets desktop PC and laptop users who need large storage volumes for consumer workloads.

Upgrade from hard drives or smaller SSDs

Replacing a mechanical hard drive with this SSD removes moving parts and raises sequential speeds to 560 MBps read and 530 MBps write. The jump is worth it when a system supports the standard 2.5 inch SATA form factor and the user wants up to 2880 TBW of endurance with AES 256-bit encryption.

Sustained workload behaviour

Under continuous use the drive draws 2.2W on average and 4W at maximum while operating between 0°C and 70°C. Random performance reaches 98,000 IOPS read and 88,000 IOPS write at QD32, supported by a refined ECC algorithm. MTBF is rated at 1,500,000 hours for long-term reliability.

How it compares

Measured against everything we stock in Internal NVMe & SATA SSDs, at today’s prices. Recalculated every night.

Price $1,247.99
Pricier than about 90% of the 1,994 comparable items (median $180.49).
Total capacity 8 TB
Higher than about 94% of the 1,368 comparable items (median 1 TB).
Sequential read speed Up to 560 MB/s
Lower than about 60% of the 1,180 comparable items (median 2,400 MB/s).
Price per TB $156.00 per TB
Cheaper than about 55% of the 1,362 comparable items (median $165.50 per TB).

New to this? Buying memory and SSDs with crypto — what to check, what it costs to pay, and what is never asked for.

Specifications

Product
Brand nameSAMSUNG
Product line870 QVO Series
Model nameMZ-77Q8T0B/AM
Part numberMZ-77Q8T0B/AM
Total capacity8 TB
Product typeInternal Solid State Drive (SSD)
Intended useConsumer
Performance
Sequential read speedUp to 560 MB/s
Sequential write speedUp to 530 MB/s
Random read (4K)Random (QD1) [IOPS]: 11,000
Random (QD32) [IOPS]: 98,000
Random write (4K)Random (QD1) [IOPS]: 35,000
Random (QD32) [IOPS]: 88,000
Storage
NAND flash typeSamsung 4-bit QLC V-NAND
Controller chipMKX
Cache memory0 MB
Data encryptionAES 256-bit Full Disk Encryption, TCG/Opal V2.0, Encrypted Drive (IEEE1667)
Connectivity
Connection protocolSATA
Ports & slots
Interface typeSATA III
Power
Idle power draw30 mW
Active power draw2.2 W Average
4 W Max
Size & build
Form factor2.5 in (6.35 cm)
Overall height7 mm
Overall width70 mm
Product depth100 mm
Product weight60g
Shipping weight0.10 kg
Package size165 × 94 × 20 mm
Environment & compliance
Operating temperature range0 °C to 70 °C
More details
Mean time between failures1,500,000 h

Other versions of this model

3 more in the same range

Questions about this item

Will the 7 mm height 2.5 inch form factor fit my laptop drive bay?

The drive measures 7 mm tall, 70 mm wide and 100 mm deep, matching the standard 2.5 inch SATA enclosure used in most laptops and desktops.

Do I need a SATA data cable and a SATA power connector to install the MZ-77Q8T0B/AM?

Yes, connect a SATA data cable to the motherboard and a SATA power lead from the PSU; the step often missed is securing the drive with screws so the connectors stay seated.

How many terabytes can be written before the 8 TB QLC V-NAND reaches its endurance rating?

The drive is rated for 2880 TBW, after which the memory cells may no longer reliably retain data.

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