SAMSUNG 970 EVO MZ-V7E500BW 500GB internal SSD
- M.2 2280
- Internal SSD
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A 2TB M.2 2280 internal SSD delivering up to 3500 MBps sequential read and 2500 MBps sequential write with 2GB LPDDR4 DRAM cache
Capacity 2TB
The Samsung 970 EVO MZ-V7E2T0BW is a 2TB internal solid state drive built for consumer workloads. It uses the M.2 2280 form factor and connects through a PCIe Gen3 x4 interface with NVMe 1.3 protocol. The drive suits desktops and laptops that need fast storage for operating systems, applications and large media files.
The Samsung Phoenix controller manages the 64-layer V-NAND MLC flash and a 2GB LPDDR4 DRAM cache. This combination delivers sequential reads up to 3500 MBps and sequential writes up to 2500 MBps. Random read performance reaches 500,000 IOPS at QD32 and 15,000 IOPS at QD1, while random write hits 480,000 IOPS at QD32. Samsung Magician software enables cloning, firmware updates and performance optimisation.
The 2TB capacity provides ample room for games, creative projects and system images. Endurance is rated for heavy daily writes over the warranty period. Active power draw averages 6W with a 10W burst ceiling, while idle consumption stays at 30 mW. The drive operates between 0°C and 70°C and withstands 1,500G shock, ensuring reliability in portable and desktop systems.
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| Product | |
|---|---|
| Brand name | SAMSUNG |
| Product line | 970 EVO |
| Model name | MZ-V7E2T0BW |
| Total capacity | 2 TB |
| Product type | Internal Solid State Drive (SSD) |
| Intended use | Consumer |
| Performance | |
| Sequential read speed | Up to 3,500 MB/s |
| Sequential write speed | Up to 2,500 MB/s |
| Random read (4K) | QD32: Up to 500,000 IOPS QD1: Up to 15,000 IOPS |
| Random write (4K) | QD32: Up to 480,000 IOPS |
| Storage | |
| NAND flash type | 64L V-NAND MLC |
| Controller chip | Samsung Phoenix Controller |
| Cache memory | 2 GB LPDDR4 DRAM |
| Ports & slots | |
| Interface type | PCIe Gen3. X4, NVMe 1.3 |
| Power | |
| Idle power draw | Max. 30 mW |
| Active power draw | Average: 6 W Maximum: 10 W (Burst mode) |
| Size & build | |
| Form factor | M.2 2280 |
| Overall height | 2.3 mm |
| Overall width | 22.1 mm |
| Product depth | 80.26 mm |
| Product weight | 7.94g |
| Shipping weight | 0.08 kg |
| Package size | 141 × 98 × 24 mm |
| Environment & compliance | |
| Operating temperature range | 0 °C to 70 °C |
| Max shock tolerance | 1,500G & 0.5 ms (Half sine) |
| More details | |
| Mean time between failures | 1,500,000 h |
Other versions of this model
The drive is rated for up to 1,200 TBW total bytes written, which represents the endurance limit of the 64-layer V-NAND MLC memory.
The operating temperature ceiling is 70 °C; Samsung's Dynamic Thermal Guard throttles performance once this threshold is approached to protect the controller and NAND.
Active power averages 6 W with bursts up to 10 W; idle power is a maximum of 30 mW, so heat output scales directly with those wattage levels.
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