XPG AGAMMIXS70B-4T-CS 4TB M.2 2280 NVMe internal SSD
- M.2 2280
- Internal SSD
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1 TB PCIe 3.0 x4 NVMe M.2 2280 drive with V-NAND 3-bit MLC, 3500 MB/s read, 3300 MB/s write and 600 TBW endurance
The Samsung 970 EVO Plus MZ-V7S1T0BW is a 1TB internal solid state drive built for tech enthusiasts, hardcore gamers and professionals who need unrivalled performance and superior reliability. It uses a PCIe Gen 3.0 x4 interface with NVMe 1.3 protocol and Samsung V-NAND 3-bit MLC memory. The Phoenix controller is paired with 1GB Low Power DDR4 SDRAM cache.
The drive connects through a PCIe Gen 3.0 x4 link governed by the NVMe 1.3 specification. Sequential throughput caps at 3500 MBps read and 3300 MBps write. Random 4KB performance reaches 600000 IOPS read and 550000 IOPS write at QD32, dropping to 19000 IOPS read and 60000 IOPS write at QD1. Active power draw averages 6W with a 9W burst ceiling and 30 mW idle. Operating temperature spans 0°C to 70°C.
The 1TB capacity provides ample space for operating systems, large game libraries and professional project files. Endurance is rated at 600 TBW, meaning the drive can absorb 600 terabytes of written data over its warranted life. MTBF is rated at 1500000 hours. Workloads exceeding sustained sequential writes or continuous high queue-depth random writes will hit the interface bandwidth ceiling and controller thermal limits before the NAND wears out.
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| Product | |
|---|---|
| Brand name | SAMSUNG |
| Product line | 970 EVO PLUS |
| Model name | MZ-V7S1T0BW |
| Total capacity | 1 TB |
| Product type | Internal Solid State Drive (SSD) |
| Intended use | Consumer |
| Performance | |
| Sequential read speed | Up to 3,500 MB/s |
| Sequential write speed | Up to 3,300 MB/s |
| Random read (4K) | QD32: Up to 600,000 IOPS QD1: Up to 19,000 IOPS |
| Random write (4K) | QD32: Up to 550,000 IOPS QD1: Up to 60,000 IOPS |
| Storage | |
| NAND flash type | V-NAND 3-bit MLC |
| Controller chip | Samsung Phoenix |
| Cache memory | Samsung 1 GB Low Power DDR4 SDRAM |
| Ports & slots | |
| Interface type | PCIe Gen 3.0 x4, NVMe 1.3 |
| Power | |
| Idle power draw | Max. 30 mW |
| Active power draw | Average: 6 W Maximum: 9 W (Burst mode) |
| Size & build | |
| Form factor | M.2 2280 |
| Overall height | 2.38 mm |
| Overall width | 22.15 mm |
| Product depth | 80.15 mm |
| Product weight | 8g |
| Shipping weight | 0.05 kg |
| Package size | 127 × 76 × 25 mm |
| Environment & compliance | |
| Operating temperature range | 0 °C to 70 °C |
| Max shock tolerance | 1,500G & 0.5 ms (Half sine) |
| More details | |
| Mean time between failures | 1,500,000 h |
The 1TB model provides 600 TBW endurance and 3500 MBps sequential read, giving more headroom for large projects than lower-capacity versions.
It lets the drive load games, apps and large files at near-peak PCIe Gen 3.0 x4 bandwidth, so boot and level-load times stay short.
The four-lane Gen 3.0 link caps throughput around 3500 MBps read and 3300 MBps write, which this drive reaches in sustained transfers.
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