Crucial CT2K8G3S160BM 16GB (2 x 8GB) DDR3 1600 SO-DIMM memory upgrade
- 16 GB (2 × 8 GB)
- DDR3 1600
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4GB DDR3 1333 ECC unbuffered module with CL9 latency and 1.50V operation
This Samsung M391B5273DH0-CH9 module provides 4GB of DDR3 1333 system specific memory. It operates at 1.50V with a CAS Latency of CL9 and uses a 240-pin form factor. The stick features ECC error correction and an unbuffered design for compatible server or workstation platforms.
This module fits systems that require 240-pin DDR3 SDRAM with ECC unbuffered operation at 1333 MT/s. It is not for platforms limited to non-ECC memory or those requiring registered DIMMs. Builders needing higher density per slot or a different voltage should verify their hardware specifications first.
The decisive specification is the 240-pin DDR3 1333 ECC unbuffered interface. Only motherboards supporting this exact combination of pin count, generation, speed and error correction will accept the module. Confirm the memory controller and slot type before purchase.
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| Product | |
|---|---|
| Brand name | SAMSUNG |
| Model name | M391B5273DH0-CH9 |
| Total capacity | 4 GB |
| Product type | 240-Pin DDR3 SDRAM |
| Performance | |
| Rated speed | DDR3 1333 |
| Processor | |
| Chipset | Major Brand Chipset |
| Memory | |
| CAS latency | CL9 |
| ECC support | Yes |
| Buffer type | Unbuffered |
| Memory rank | 2Rx8 |
| Power | |
| Rated voltage | 1.5 V |
Align the notch on the module with the key in the 240-Pin DDR3 slot, press firmly until both retention clips click into place, and verify the system recognises the full 4GB capacity at DDR3 1333 speed.
No scheduled maintenance is required for this DDR3 ECC Unbuffered module; replacement is only necessary if a memory test reports correctable errors that exceed the ECC correction capability.
The 1.50V operating voltage and CL9 latency define the thermal and timing envelope; sustained loads are constrained by the DDR3 1333 data rate and the 2Rx8 rank organisation.
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