XPG AGAMMIXS70B-4T-CS 4TB M.2 2280 NVMe internal SSD
- M.2 2280
- Internal SSD
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SAMSUNG Refurbished
Refurbished M.2 2280 NVMe SSD with 256GB capacity, PCI-Express 3.0 x4 interface, up to 2200 MBps sequential read and 900 MBps sequential write speeds
This internal solid state drive uses a PCI-Express 3.0 x4 interface and the Samsung UBX controller with 512MB DRAM cache. It delivers sequential reads up to 2200 MBps and writes up to 900 MBps in the M.2 2280 form factor. The refurbished unit targets professionals who need high throughput for demanding workloads.
The UBX controller combined with 512MB DRAM enables random read performance up to 270000 IOPS at queue depth 32 and random write up to 85000 IOPS at the same depth. At queue depth 1 the figures are 11000 IOPS read and 43000 IOPS write. Average active power draw is 5.1W with a 6.4W burst maximum, and the drive operates from 0°C to 70°C.
The 256GB capacity and 1500000 hour MTBF suit heavy workload professionals who prioritise endurance and low latency over maximum storage space. Users needing larger volumes or SATA connectivity should consider alternative drives. The 2.38mm height fits standard M.2 slots without clearance issues.
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| Product | |
|---|---|
| Brand name | SAMSUNG |
| Product line | 950 PRO |
| Model name | MZ-V5P256BW |
| Total capacity | 256 GB |
| Product type | Internal Solid State Drive (SSD) |
| Intended use | Consumer |
| Performance | |
| Sequential read speed | Up to 2,200 MB/s |
| Sequential write speed | Up to 900 MB/s |
| Random read (4K) | Up to 270,000 IOPS (4 KB, QD32) Up to 11,000 IOPS (4 KB, QD1) |
| Random write (4K) | Up to 85,000 IOPS (4 KB, QD32) Up to 43,000 IOPS (4 KB, QD1) |
| Storage | |
| Controller chip | Samsung UBX controller |
| Cache memory | 512 MB DRAM |
| Ports & slots | |
| Interface type | PCI-Express 3.0 x4 |
| Power | |
| Active power draw | Average: 5.1 W Maximum: 6.4 W (Burst mode) |
| Size & build | |
| Form factor | M.2 2280 |
| Overall height | 2.38 mm |
| Overall width | 22.15 mm |
| Product depth | 80.15 mm |
| Product weight | 10g |
| Shipping weight | 0.06 kg |
| Package size | 191 × 165 × 102 mm |
| Environment & compliance | |
| Operating temperature range | 0 °C to 70 °C |
| Max shock tolerance | 1500G, duration 0.5m sec, 3 axis |
| More details | |
| Mean time between failures | 1,500,000 h |
The drive carries a 1,500,000 hour MTBF rating, indicating the average operating time between failures under normal workloads.
Sequential write peaks at 900 MBps; once the 512MB DRAM cache fills, the controller throttles to the NAND's native write rate.
Active draw averages 5.1W with a 6.4W burst maximum, and the drive is rated to operate continuously up to 70°C.
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