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Samsung 9100 PRO 4TB M.2 2280 internal SSD, bare circuit board with black controller and NAND chips

SAMSUNG

SAMSUNG 9100 PRO 4TB internal SSD MZ-VAP4T0B/AM

SKU CH-A1YV-QTKCQ MPN MZ-VAP4T0B/AM

PCIe 5.0 x4 NVMe 2.0 drive with 4TB V-NAND TLC, 14800 MB/s read, 13400 MB/s write, 2200000/2600000 IOPS and 2400 TBW

  • Total capacity4 TB
  • Sequential read speedUp to 14,800 MB/s
  • Sequential write speedUp to 13,400 MB/s
  • Interface typePCI-Express 5.0 x4
  • Form factorM.2 2280
  • Product typeInternal Solid State Drive (SSD)

Style Without Heatsink

Model 4TB

  • Sequential reads up to 14,800 MB/s accelerate large-file workflows
  • Sequential writes up to 13,400 MB/s keep pace with heavy output
  • Random reads up to 2,200,000 IOPS speed up AI and gaming loads
  • Random writes up to 2,600,000 IOPS sustain high-throughput tasks
  • 4 GB LPDDR4X cache and 964 GB TurboWrite buffer maintain burst performance

Samsung 9100 PRO 4TB PCIe 5.0 NVMe SSD

The Samsung 9100 PRO 4TB is an M.2 2280 internal solid-state drive that uses a PCI-Express 5.0 x4 interface and the NVMe 2.0 protocol. It is built with Samsung V-NAND TLC (V8) memory and an in-house controller paired with a 4GB LPDDR4X cache. The drive targets consumers who need high throughput for AI computing, gaming and heavy-duty workstation workloads.

Upgrade from PCIe 4.0 drives such as the 990 PRO

Moving from a PCIe 4.0 NVMe SSD to this PCIe 5.0 model adds sequential read speeds up to 14800 MBps and sequential write speeds up to 13400 MBps. Random performance reaches 2200000 IOPS read and 2600000 IOPS write. The jump is worth it when workloads saturate the older bus, such as large dataset training, 4K or 8K video editing, or games that stream assets directly from storage.

Sustained load behaviour and thermal control

Intelligent TurboWrite 2.0 provides a 964GB write buffer that absorbs bursts before folding back to native TLC speeds. The controller manages power with a 5.7mW device sleep state and dynamic thermal throttling to maintain performance without a heatsink. Encryption support includes Class 0 AES 256, TCG Opal 2.0 and IEEE 1667 eDrive. Rated endurance is 2400 TBW.

How it compares

Measured against everything we stock in Internal NVMe & SATA SSDs, at today’s prices. Recalculated every night.

Price $1,033.99
Pricier than about 90% of the 1,994 comparable items (median $180.49).
Total capacity 4 TB
Higher than about 90% of the 1,368 comparable items (median 1 TB).
Sequential read speed Up to 14,800 MB/s
Higher than about 94% of the 1,180 comparable items (median 2,400 MB/s).
Price per TB $258.50 per TB
Pricier than about 71% of the 1,362 comparable items (median $165.50 per TB).

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Specifications

Product
Brand nameSAMSUNG
Product line9100 PRO
Model nameMZ-VAP4T0B/AM
Total capacity4 TB
Product typeInternal Solid State Drive (SSD)
Intended useConsumer
Performance
Sequential read speedUp to 14,800 MB/s
Sequential write speedUp to 13,400 MB/s
Random read (4K)Up to 2,200,000 IOPS
Random write (4K)Up to 2,600,000 IOPS
Storage
NAND flash typeSamsung V NAND TLC (V8)
Controller chipIn-House Controller
Cache memory4 GB LPDDR4X
Intelligent TurboWrite 2.0: 964 GB
Data encryptionClass 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667)
Write endurance2400 TB
Connectivity
Connection protocolNVMe 2.0
Ports & slots
Interface typePCI-Express 5.0 x4
Power
Idle power draw5.7mW Device Sleep (L1.2)
Active power draw9.0 W / 8.2 W (Read/Write)
Size & build
Form factorM.2 2280
Heat sinkWithout HeatSink
Overall height2.38 mm
Overall width22.15 mm
Product depth80.15 mm
Product weight9g
Shipping weight0.05 kg
Package size142 × 99 × 23 mm

Other versions of this model

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Questions about this item

Does the M.2 2280 form factor fit my motherboard slot?

The drive uses the standard M.2 2280 form factor, so it fits any motherboard with an M.2 key‑M slot that supports PCIe 5.0 x4.

What is the common mistake when installing the 9100 PRO without a heatsink?

Many builders forget to enable the motherboard’s active cooling for the M.2 slot; without airflow the controller can throttle under sustained PCIe 5.0 loads.

When should I expect the 4TB drive to reach its 2400 TBW endurance limit?

At 2400 TBW, the drive is rated for 2.4 petabytes of host writes; typical heavy workloads reach that point after several years of daily multi‑terabyte transfers.

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