SAMSUNG 9100 PRO MZ-VAP1T0CW 1TB internal SSD
- M.2 2280
- Internal SSD
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A 2 TB PCIe 5.0 M.2 2280 SSD with heatsink delivering up to 14 700 MB/s read and 13 400 MB/s write for AI, gaming and workstation workloads
Style With Heatsink
Model 2TB w/ Heatsink
The Samsung 9100 Pro MZ-VAP2T0CW is a 2TB NVMe 2.0 drive that uses PCIe 5.0 x4 and Samsung V NAND TLC (V8) memory. An in-house controller and 2GB LPDDR4X cache deliver sequential reads up to 14700 MBps and writes up to 13400 MBps. Random performance reaches 1850000 read IOPS and 2600000 write IOPS. It is aimed at AI computing, gaming and workstation tasks.
The M.2 2280 module measures 80.15mm long, 25mm wide and 8.88mm high, weighing 28g. An integrated heatsink handles thermal control without extra case airflow. AES 256 encryption supports Class 0, TCG/Opal 2.0 and MS eDrive IEEE1667. Intelligent TurboWrite 2.0 provides 482GB of SLC buffer. Compatible PCs, laptops and PlayStation 5 consoles can use it directly.
Active power draws 8.1W reading and 7.9W writing while idle sleep drops to 4.0mW in L1.2. The controller balances performance and heat so throughput stays consistent during long renders or model training. Rated endurance is 1200TB written. Power efficiency and the heatsink keep temperatures in check under continuous load.
Measured against everything we stock in Internal NVMe & SATA SSDs, at today’s prices. Recalculated every night.
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| Product | |
|---|---|
| Brand name | SAMSUNG |
| Product line | 9100 PRO |
| Model name | MZ-VAP2T0CW |
| Total capacity | 2 TB |
| Product type | Internal Solid State Drive (SSD) |
| Intended use | Consumer |
| Performance | |
| Sequential read speed | Up to 14,700 MB/s |
| Sequential write speed | Up to 13,400 MB/s |
| Random read (4K) | Up to 1,850,000 IOPS |
| Random write (4K) | Up to 2,600,000 IOPS |
| Storage | |
| NAND flash type | Samsung V NAND TLC (V8) |
| Controller chip | In-House Controller |
| Cache memory | 2 GB LPDDR4X Intelligent TurboWrite 2.0: 482 GB |
| Data encryption | Class 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667) |
| Write endurance | 1200 TB |
| Connectivity | |
| Connection protocol | NVMe 2.0 |
| Ports & slots | |
| Interface type | PCI-Express 5.0 x4 |
| Power | |
| Idle power draw | 4.0mW Device Sleep (L1.2) |
| Active power draw | 8.1 W / 7.9 W (Read/Write) |
| Size & build | |
| Form factor | M.2 2280 |
| Heat sink | With HeatSink |
| Overall height | 8.88 mm |
| Overall width | 25 mm |
| Product depth | 80.15 mm |
| Product weight | 28g |
| Shipping weight | 0.16 kg |
| Package size | 142 × 99 × 23 mm |
Other versions of this model
The M.2 2280 form factor measures 80.15 mm long, 25 mm wide and 8.88 mm high including the integrated heatsink, so it fits any slot that accepts a 2280 module with that height allowance.
The manufacturer lists PlayStation 5 compatibility; the drive meets the console's PCIe 5.0 x4 NVMe requirement and includes the required heatsink.
Intelligent TurboWrite 2.0 provides up to 482 GB of SLC cache for burst writes, after which the drive writes directly to the V8 TLC NAND.
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