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SAMSUNG

SAMSUNG 9100 PRO MZ-VAP2T0CW 2TB internal SSD

SKU CH-WFDN-W7XJ1 MPN MZ-VAP2T0CW

A 2 TB PCIe 5.0 M.2 2280 SSD with heatsink delivering up to 14 700 MB/s read and 13 400 MB/s write for AI, gaming and workstation workloads

  • Total capacity2 TB
  • Sequential read speedUp to 14,700 MB/s
  • Sequential write speedUp to 13,400 MB/s
  • Interface typePCI-Express 5.0 x4
  • Form factorM.2 2280
  • Product typeInternal Solid State Drive (SSD)
  • PCIe 5.0 x4 interface delivers up to 14,700 MB/s sequential read speeds
  • NVMe 2.0 protocol with 2GB LPDDR4X cache enables up to 2,600,000 IOPS random write performance
  • 1,200 TBW endurance rating supports heavy AI workloads and gaming sessions
  • Integrated heatsink maintains thermal control during sustained high-speed operation
  • AES 256-bit encryption with TCG/Opal v2.0 protects sensitive data at rest

Built for AI and heavy workloads

The Samsung 9100 Pro MZ-VAP2T0CW is a 2TB NVMe 2.0 drive that uses PCIe 5.0 x4 and Samsung V NAND TLC (V8) memory. An in-house controller and 2GB LPDDR4X cache deliver sequential reads up to 14700 MBps and writes up to 13400 MBps. Random performance reaches 1850000 read IOPS and 2600000 write IOPS. It is aimed at AI computing, gaming and workstation tasks.

Fits M.2 2280 slots with heatsink

The M.2 2280 module measures 80.15mm long, 25mm wide and 8.88mm high, weighing 28g. An integrated heatsink handles thermal control without extra case airflow. AES 256 encryption supports Class 0, TCG/Opal 2.0 and MS eDrive IEEE1667. Intelligent TurboWrite 2.0 provides 482GB of SLC buffer. Compatible PCs, laptops and PlayStation 5 consoles can use it directly.

Sustained speed with smart thermal control

Active power draws 8.1W reading and 7.9W writing while idle sleep drops to 4.0mW in L1.2. The controller balances performance and heat so throughput stays consistent during long renders or model training. Rated endurance is 1200TB written. Power efficiency and the heatsink keep temperatures in check under continuous load.

How it compares

Measured against everything we stock in Internal NVMe & SATA SSDs, at today’s prices. Recalculated every night.

Price $524.99
Pricier than about 81% of the 1,994 comparable items (median $180.49).
Total capacity 2 TB
Higher than about 70% of the 1,368 comparable items (median 1 TB).
Sequential read speed Up to 14,700 MB/s
Higher than about 94% of the 1,180 comparable items (median 2,400 MB/s).
Price per TB $262.50 per TB
Pricier than about 71% of the 1,362 comparable items (median $165.50 per TB).

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Specifications

Product
Brand nameSAMSUNG
Product line9100 PRO
Model nameMZ-VAP2T0CW
Total capacity2 TB
Product typeInternal Solid State Drive (SSD)
Intended useConsumer
Performance
Sequential read speedUp to 14,700 MB/s
Sequential write speedUp to 13,400 MB/s
Random read (4K)Up to 1,850,000 IOPS
Random write (4K)Up to 2,600,000 IOPS
Storage
NAND flash typeSamsung V NAND TLC (V8)
Controller chipIn-House Controller
Cache memory2 GB LPDDR4X
Intelligent TurboWrite 2.0: 482 GB
Data encryptionClass 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667)
Write endurance1200 TB
Connectivity
Connection protocolNVMe 2.0
Ports & slots
Interface typePCI-Express 5.0 x4
Power
Idle power draw4.0mW Device Sleep (L1.2)
Active power draw8.1 W / 7.9 W (Read/Write)
Size & build
Form factorM.2 2280
Heat sinkWith HeatSink
Overall height8.88 mm
Overall width25 mm
Product depth80.15 mm
Product weight28g
Shipping weight0.16 kg
Package size142 × 99 × 23 mm

Other versions of this model

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Questions about this item

Does the drive fit a standard M.2 2280 slot with the heatsink attached?

The M.2 2280 form factor measures 80.15 mm long, 25 mm wide and 8.88 mm high including the integrated heatsink, so it fits any slot that accepts a 2280 module with that height allowance.

Will this SSD work in a PlayStation 5?

The manufacturer lists PlayStation 5 compatibility; the drive meets the console's PCIe 5.0 x4 NVMe requirement and includes the required heatsink.

What capacity is available for sustained writes before the cache folds back to native TLC speed?

Intelligent TurboWrite 2.0 provides up to 482 GB of SLC cache for burst writes, after which the drive writes directly to the V8 TLC NAND.

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