SAMSUNG 970 EVO PLUS M.2 2280 250GB internal SSD MZ-V7S250B/AM
- Internal SSD
- Consumer
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M.2 2280 internal SSD with 1TB V-NAND storage, PCIe Gen 3.0 x4 NVMe 1.3 interface, up to 3500 MBps read and 3300 MBps write speeds, 600 TBW endurance and AES 256-bit encryption
Capacity 1TB
This internal SSD uses a PCIe Gen 3.0 x4 interface with NVMe 1.3 protocol. It is built for consumer desktops and laptops that need fast storage for operating systems, games, and creative workloads. The drive delivers up to 3500 MBps sequential read and 3300 MBps sequential write speeds.
The M.2 2280 form factor fits standard motherboard slots without adapters. Samsung Phoenix controller manages the V-NAND memory and the 1GB Low Power DDR4 SDRAM cache for sustained performance. AES 256-bit encryption with TCG Opal and IEEE 1667 support protects data at rest.
The controller monitors temperature and throttles to maintain optimal operating limits during heavy writes. Rated endurance is 600 TBW with a 1,500,000 hour MTBF. Random read reaches 600,000 IOPS at QD32 and 19,000 IOPS at QD1; random write reaches 550,000 IOPS at QD32 and 60,000 IOPS at QD1.
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| Product | |
|---|---|
| Brand name | SAMSUNG |
| Product line | 970 EVO PLUS |
| Model name | MZ-V7S1T0B/AM |
| Part number | MZ-V7S1T0B/AM |
| Total capacity | 1 TB |
| Product type | Internal Solid State Drive (SSD) |
| Intended use | Consumer |
| Performance | |
| Sequential read speed | Up to 3,500 MB/s |
| Sequential write speed | Up to 3,300 MB/s |
| Random read (4K) | QD32: Up to 600,000 IOPS QD1: Up to 19,000 IOPS |
| Random write (4K) | QD32: Up to 550,000 IOPS QD1: Up to 60,000 IOPS |
| Storage | |
| NAND flash type | V-NAND 3-bit MLC |
| Controller chip | Samsung Phoenix |
| Cache memory | Samsung 1 GB Low Power DDR4 SDRAM |
| Data encryption | AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive) |
| Write endurance | 600 TB |
| Ports & slots | |
| Interface type | PCIe Gen 3.0 x4, NVMe 1.3 |
| Power | |
| Idle power draw | Max. 30 mW |
| Active power draw | Average: 6 W Maximum: 9 W (Burst mode) |
| Size & build | |
| Form factor | M.2 2280 |
| Overall height | 2.38 mm |
| Overall width | 22.15 mm |
| Product depth | 80.15 mm |
| Product weight | 8g |
| Shipping weight | 0.09 kg |
| Package size | 155 × 97 × 23 mm |
| Environment & compliance | |
| Operating temperature range | 0 °C to 70 °C |
| Max shock tolerance | 1,500G & 0.5 ms (Half sine) |
| More details | |
| Mean time between failures | 1,500,000 h |
Other versions of this model
The PCIe Gen 3.0 x4 NVMe 1.3 interface caps sequential read at 3500 MB/s and sequential write at 3300 MB/s.
It requires an M.2 2280 slot that accepts a single-sided 80 mm module.
Insert the drive at an angle into the M.2 slot, secure it with the motherboard screw, then enable NVMe in BIOS so the OS detects it.
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