SAMSUNG 970 EVO PLUS M.2 2280 250GB internal SSD MZ-V7S250B/AM
- Internal SSD
- Consumer
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M.2 2280 internal SSD with 500GB capacity, PCIe Gen 3.0 x4 NVMe 1.3 interface, up to 3500 MBps read and 3200 MBps write speeds, and AES 256-bit encryption
Capacity 500GB
The Samsung 970 EVO Plus MZ-V7S500B/AM is a 500GB internal solid state drive built on the M.2 2280 form factor. It connects through a PCIe Gen 3.0 x4 interface using the NVMe 1.3 protocol. The drive targets enthusiasts, high-end gamers and 4K or 3D content designers who need responsive storage for demanding workloads.
V-NAND 3-bit MLC memory and a Samsung Phoenix controller deliver sequential reads up to 3500 MBps and writes up to 3200 MBps. Random read reaches 480,000 IOPS at QD32 and 19,000 IOPS at QD1. Random write hits 550,000 IOPS at QD32 and 60,000 IOPS at QD1. A 512MB Low Power DDR4 cache absorbs burst writes before the native TLC media becomes the bottleneck.
Dynamic Thermal Guard monitors temperature and throttles performance to stay within the 0 to 70 °C operating window. The controller manages heat without an external heatsink. AES 256-bit hardware encryption meets TCG Opal and IEEE 1667 standards. MTBF is rated at 1,500,000 hours.
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| Product | |
|---|---|
| Brand name | SAMSUNG |
| Product line | 970 EVO PLUS |
| Model name | MZ-V7S500B/AM |
| Part number | MZ-V7S500B/AM |
| Total capacity | 500 GB |
| Product type | Internal Solid State Drive (SSD) |
| Intended use | Consumer |
| Performance | |
| Sequential read speed | Up to 3,500 MB/s |
| Sequential write speed | Up to 3,200 MB/s |
| Random read (4K) | QD32: Up to 480,000 IOPS QD1: Up to 19,000 IOPS |
| Random write (4K) | QD32: Up to 550,000 IOPS QD1: Up to 60,000 IOPS |
| Storage | |
| NAND flash type | V-NAND 3-bit MLC |
| Controller chip | Samsung Phoenix |
| Cache memory | Samsung 512 MB Low Power DDR4 SDRAM |
| Data encryption | AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive) |
| Connectivity | |
| Connection protocol | NVMe 1.3 |
| Ports & slots | |
| Interface type | PCIe Gen 3.0 x4, NVMe 1.3 |
| Power | |
| Idle power draw | Max. 30 mW |
| Active power draw | Average: 5.8 W Maximum: 9 W (Burst mode) |
| Size & build | |
| Form factor | M.2 2280 |
| Overall height | 2.38 mm |
| Overall width | 22.15 mm |
| Product depth | 80.15 mm |
| Product weight | 8g |
| Shipping weight | 0.07 kg |
| Package size | 142 × 98 × 23 mm |
| Environment & compliance | |
| Operating temperature range | 0 °C to 70 °C |
| Max shock tolerance | 1,500G & 0.5 ms (Half sine) |
| More details | |
| Mean time between failures | 1,500,000 h |
Other versions of this model
Yes, the drive is backward compatible and will operate at PCIe Gen 2.0 speeds in that slot, though sequential read and write performance will be limited to the bandwidth of Gen 2.0 rather than the rated 3500 MB/s and 3200 MB/s.
Open Samsung Magician software; the drive dashboard displays the controller model, firmware version, and confirms the 512 MB Low Power DDR4 cache is detected and enabled.
The box contains only the bare M.2 2280 SSD; a motherboard standoff screw and any aftermarket heatsink must be sourced separately.
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