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Green rectangular M.2 2280 SSD with black label and gold edge connector

SAMSUNG

SAMSUNG 990 2TB M.2 2280 internal SSD MZ-V9V2T0B/AM

SKU CH-V731-9EA8B MPN MZ-V9V2T0B/AM

A 2TB M.2 2280 NVMe SSD delivering up to 7250 MBps read and 6450 MBps write with 800TB endurance

  • Total capacity2 TB
  • Sequential read speedUp to 7,250 MB/s
  • Sequential write speedUp to 6,450 MB/s
  • Interface typePCI-Express 4.0 x4
  • Form factorM.2 2280
  • Product typeInternal Solid State Drive (SSD)

Capacity

  • Up to 7250 MB/s sequential read speeds for fast system responsiveness
  • Up to 6450 MB/s sequential write speeds for quick large-file transfers
  • Up to 1,200,000 IOPS random write performance for responsive multitasking
  • 800 TBW endurance rating for long-term reliability
  • AES 256 encryption with TCG/Opal v2.0 for hardware-based data protection

Samsung 990 2TB M.2 2280 NVMe SSD

The Samsung 990 2TB M.2 2280 NVMe SSD uses Samsung V NAND and an in-house controller over a PCI-Express 4.0 x4 link. It delivers sequential reads up to 7250 MBps and writes up to 6450 MBps with 4KB random performance of 850000 read and 1200000 write IOPS. The drive is rated for 800TB written and targets consumer workloads.

Build quality and daily use

The single-sided M.2 2280 form factor fits standard motherboard slots without blocking adjacent components. Host Memory Buffer caching reduces component count while maintaining speed. Hardware encryption covers Class 0 AES 256, TCG/Opal v2.0 and MS eDrive IEEE1667 for data-at-rest protection. Active power averages 4.3W read and 3.8W write.

Practical limits of PCI-Express 4.0 x4

The x4 lane width caps peak throughput at the PCI-Express 4.0 ceiling, so heavier queues saturate the bus before the flash. Systems limited to PCI-Express 3.0 will halve the available bandwidth. Idle power drops to 55mW in PS3 APST and 3mW in PS4 L1.2 states. Sustained write temperatures may trigger throttling without adequate motherboard heatsinking.

How it compares

Measured against everything we stock in Internal NVMe & SATA SSDs, at today’s prices. Recalculated every night.

Price $370.99
Pricier than about 73% of the 1,994 comparable items (median $180.49).
Total capacity 2 TB
Higher than about 70% of the 1,368 comparable items (median 1 TB).
Sequential read speed Up to 7,250 MB/s
Higher than about 85% of the 1,180 comparable items (median 2,400 MB/s).
Price per TB $185.50 per TB
Pricier than about 56% of the 1,362 comparable items (median $165.50 per TB).

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Specifications

Product
Brand nameSAMSUNG
Product line990
Model nameMZ-V9V2T0B/AM
Total capacity2 TB
Product typeInternal Solid State Drive (SSD)
Intended useConsumer
Performance
Sequential read speedUp to 7,250 MB/s
Sequential write speedUp to 6,450 MB/s
Random read (4K)Up to 850,000 IOPS
Random write (4K)Up to 1,200,000 IOPS
Storage
NAND flash typeSamsung V NAND
Controller chipIn-House Controller
Cache memoryHMB (Host Memory Buffer)
Data encryptionClass 0 (AES 256) , TCG/Opal v2.0, MS eDrive (IEEE1667)
Write endurance800 TB
Connectivity
Connection protocolNVMe 2.0
Ports & slots
Interface typePCI-Express 4.0 x4
Power
Idle power drawPS3 APST on / PS4 L1.2: Typical 55mW / Typical 3mW
Active power drawRead/Write, Average: 4.3 W / 3.8 W
Size & build
Form factorM.2 2280
Overall height2.38 mm
Overall width22.15 mm
Product depth80.15 mm
Product weight6g
Shipping weight0.09 kg
Package size168 × 99 × 23 mm

Other versions of this model

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Questions about this item

What does the PCI-Express 4.0 x4 interface cap the sequential read speed at?

The PCI-Express 4.0 x4 interface supports up to 7250 MBps sequential read and 6450 MBps sequential write.

What physical slot and form factor does the M.2 2280 drive require?

It fits a standard M.2 2280 slot measuring 22 mm wide by 80 mm long on the motherboard.

How is the drive installed and which step is often missed?

Insert the drive at an angle into the M.2 slot, press it flat, and secure it with the motherboard screw; many forget to fasten that screw.

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