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Green printed circuit board M.2 2280 SSD with black controller and silver label

SAMSUNG

SAMSUNG 990 2TB M.2 2280 PCIe 4.0 x4 internal SSD

SKU CH-56PD-EGNQ6

High-capacity 2TB internal SSD delivering up to 7,250 MB/s sequential read and 6,450 MB/s sequential write speeds for fast game loads and large file transfers

  • Total capacity2 TB
  • Sequential read speedUp to 7,250 MB/s
  • Sequential write speedUp to 6,450 MB/s
  • Interface typePCI-Express 4.0 x4
  • Form factorM.2 2280
  • Random read (4K)Up to 850,000 IOPS

Capacity 2TB

  • Up to 7,250 MB/s sequential read accelerates game loading and large-file transfers
  • Up to 6,450 MB/s sequential write speeds project exports and install updates
  • Up to 1,200,000 IOPS random write keeps multitasking responsive under heavy workloads
  • 800 TBW endurance rating supports long-term archival of 4K footage and growing libraries
  • AES 256-bit hardware encryption protects data without software overhead

Capacity and Interface

The Samsung 990 is a 2 TB internal solid-state drive built in the M.2 2280 form factor and connected through a PCIe 4.0 x4 link. It uses Samsung V-NAND and an in-house controller with Host Memory Buffer caching. The drive supports NVMe 2.0 and hardware-based AES 256 encryption with TCG Opal 2.0 and IEEE 1667 compliance.

Ideal Users and Limits

This drive suits desktop builders, game collectors and digital archivists who want a large, fast library without deleting titles or offloading footage. The 800 TBW rating and strong random IOPS handle heavy write workloads. Systems limited to PCIe 3.0 or lacking an M.2 slot will not reach the advertised throughput and should consider a different interface.

Sequential Read Speed

The headline figure is a maximum sequential read of 7,250 MB/s, paired with a 6,450 MB/s sequential write. Those speeds decide whether the drive can feed a GPU-direct storage pipeline or saturate a PCIe 4.0 x4 lane during large game loads and 4 K media transfers. If the workload rarely hits sustained sequential queues, a slower, cheaper drive may be more cost-effective.

How it compares

Measured against everything we stock in Internal NVMe & SATA SSDs, at today’s prices. Recalculated every night.

Price $502.99
Pricier than about 80% of the 1,994 comparable items (median $180.49).
Total capacity 2 TB
Higher than about 70% of the 1,368 comparable items (median 1 TB).
Sequential read speed Up to 7,250 MB/s
Higher than about 85% of the 1,180 comparable items (median 2,400 MB/s).
Price per TB $251.50 per TB
Pricier than about 70% of the 1,362 comparable items (median $165.50 per TB).

New to this? Buying memory and SSDs with crypto — what to check, what it costs to pay, and what is never asked for.

Specifications

Product
Brand nameSAMSUNG
Product line990
Model nameMZ-V9V2T0BW
Part numberMZ-V9V2T0BW
Total capacity2 TB
Product typeInternal Solid State Drive (SSD)
Intended useConsumer
Performance
Sequential read speedUp to 7,250 MB/s
Sequential write speedUp to 6,450 MB/s
Random read (4K)Up to 850,000 IOPS
Random write (4K)Up to 1,200,000 IOPS
Storage
Write endurance800 TB
Controller chipIn-House Controller
NAND flash typeSamsung V NAND
Cache memoryHMB (Host Memory Buffer)
Data encryptionClass 0 (AES 256) , TCG/Opal v2.0, MS eDrive (IEEE1667)
Connectivity
Connection protocolNVMe 2.0
Ports & slots
Interface typePCI-Express 4.0 x4
Power
Active power drawRead/Write, Average: 4.3 W / 3.8 W
Idle power drawPS3 APST on / PS4 L1.2: Typical 55mW / Typical 3mW
Size & build
Form factorM.2 2280
Overall height2.38 mm
Overall width22.15 mm
Product depth80.15 mm
Product weight6g

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Questions about this item

Will the M.2 2280 form factor fit my desktop motherboard slot?

The drive uses the standard M.2 2280 form factor, measuring 22 mm wide by 80 mm long, which fits most modern desktop motherboards with an M.2 key-M slot.

How do I install the drive and which step is often missed?

Insert the drive at an angle into the PCIe 4.0 x4 M.2 slot, secure it with the motherboard screw, then enable NVMe in the BIOS so the operating system can detect it.

When will the Samsung V NAND memory need replacement based on endurance?

The drive is rated for 800 TBW, meaning you can write up to 800 terabytes before the warranty endurance limit is reached.

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