SAMSUNG 990 1TB M.2 2280 internal SSD MZ-V9V1T0B/AM
- M.2 2280
- Internal SSD
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M.2 2280 1TB NVMe SSD delivers up to 7150 MB/s read and 6450 MB/s write with 400 TBW endurance
Capacity 1TB
The Samsung 990 M.2 2280 1TB drive uses a PCIe 4.0 x4 interface and an in-house controller with Samsung V NAND to reach sequential reads up to 7,150 MB/s and writes up to 6,450 MB/s. Random performance hits 700,000 IOPS read and 1,100,000 IOPS write. It suits game collectors, DIY PC builders and digital archivists who need fast load times and responsive project exports.
The 2280 form factor fits standard desktop M.2 slots keyed for PCIe 4.0 x4. No cables or brackets are required; the drive seats directly on the motherboard. Common issues arise when the slot shares bandwidth with other devices or when the BIOS lacks NVMe boot support, so verify platform compatibility before fitting.
The 1.0 TB capacity holds large game libraries, 4K footage and long-term archives without constant offloading. Rated at 400 TBW, the drive sustains heavy daily writes for years. Idle power drops to 55 mW in PS3 and 3 mW in PS4 L1.2, while hardware AES 256 encryption plus TCG Opal 2.0 and IEEE 1667 protect stored data.
Measured against everything we stock in Internal NVMe & SATA SSDs, at today’s prices. Recalculated every night.
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| Product | |
|---|---|
| Brand name | SAMSUNG |
| Product line | 990 |
| Model name | MZ-V9V1T0BW |
| Part number | MZ-V9V1T0BW |
| Total capacity | 1 TB |
| Product type | Internal Solid State Drive (SSD) |
| Intended use | Consumer |
| Performance | |
| Sequential read speed | Up to 7,150 MB/s |
| Sequential write speed | Up to 6,450 MB/s |
| Random read (4K) | Up to 700,000 IOPS |
| Random write (4K) | Up to 1,100,000 IOPS |
| Storage | |
| NAND flash type | Samsung V NAND |
| Controller chip | In-House Controller |
| Cache memory | HMB (Host Memory Buffer) |
| Data encryption | Class 0 (AES 256) , TCG/Opal v2.0, MS eDrive (IEEE1667) |
| Write endurance | 400 TB |
| Connectivity | |
| Connection protocol | NVMe 2.0 |
| Ports & slots | |
| Interface type | PCI-Express 4.0 x4 |
| Power | |
| Idle power draw | PS3 APST on / PS4 L1.2: Typical 55mW / Typical 3mW |
| Active power draw | Read/Write, Average: 4.0 W / 3.7 W |
| Size & build | |
| Form factor | M.2 2280 |
| Overall height | 2.38 mm |
| Overall width | 22.15 mm |
| Product depth | 80.15 mm |
| Product weight | 6g |
Other versions of this model
Run a benchmark such as CrystalDiskMark on the MZ-V9V1T0BW and compare the sequential read result to the 7,150 MB/s specification.
The box contains the MZ-V9V1T0BW SSD only; a compatible M.2 slot with PCIe 4.0 x4 support and a motherboard standoff screw are required but not included.
The 1TB model provides 1.0 TB of V-NAND storage with 400 TBW endurance, suitable for extensive game collections and high-resolution media archives.
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